Lateral pnp bipolar transistor formed with multiple epitaxial layers

ABSTRACT

A lateral bipolar transistor with deep emitter and deep collector regions is formed using multiple epitaxial layers of the same conductivity type. Deep emitter and deep collector regions are formed without the use of trenches. Vertically aligned diffusion regions are formed in each epitaxial layer so that the diffusion regions merged into a contiguous diffusion region after annealing to function as emitter or collector or isolation structures. In another embodiment, a lateral trench PNP bipolar transistor is formed using trench emitter and trench collector regions. In yet another embodiment, a lateral PNP bipolar transistor with a merged LDMOS transistor is formed to achieve high performance.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 13/243,002, entitled LATERAL PNP BIPOLAR TRANSISTOR FORMED WITHMULTIPLE EPITAXIAL LAYERS, filed Sep. 23, 2011 which is incorporatedherein by reference for all purposes.

The present application is related to and commonly assigned U.S. patentapplication entitled “Lateral PNP Bipolar Transistor with Narrow TrenchEmitter,” of the same inventors hereof, having patent application Ser.No. 13/242,970, which patent application is incorporated herein byreference in its entirety.

FIELD OF THE INVENTION

The invention relates to lateral bipolar transistors and, in particular,to lateral bipolar transistors with deep emitter and collector regionsformed using multiple epitaxial layers.

DESCRIPTION OF THE RELATED ART

Lateral bipolar transistors include emitter and collector regions formedin a substrate functioning as the base of the transistor. The emitterand collector are formed such that lateral current flow in an area inthe substrate relatively remote from the surface of the substrate.Lateral PNP bipolar transistors are known but existing lateral PNPbipolar transistors typically has limited performance.

Furthermore, lateral PNP bipolar transistors have associated with it aparasitic substrate PNP device. The parasitic PNP device is formedbetween the P-emitter, the N-base and the P-substrate in the verticaldirection. Because this vertical parasitic PNP device can havesignificant current gain, it is necessary to disable this parasiticdevice to avoid interfering with the main lateral PNP device. Therefore,most existing lateral PNP transistor includes an N+ buried layer underthe P-emitter where the high doping of the N+ buried layer effectivelynull the gain of the parasitic device.

SUMMARY OF THE INVENTION

According to one embodiment of the present invention, a lateral bipolartransistor includes a semiconductor substrate of a first conductivitytype; a first buried layer of the first conductivity type and a secondburied layer of the second conductivity type both formed on thesubstrate where the second conductivity type being opposite the firstconductivity type; and two or more epitaxial layers of the secondconductivity type formed successively on the substrate where eachepitaxial layer includes two or more diffusion regions formed therein.The diffusion regions formed in one epitaxial layer are in verticalalignment with the diffusion regions formed in an adjacent epitaxiallayer. A first set of diffusion regions in vertical alignment forms acontiguous diffusion region of the first conductivity type and functionsas an emitter region, and a second set of diffusion regions in verticalalignment forms a contiguous diffusion region of the first conductivitytype and functions as a collector region. A base region is formed in theone or more epitaxial layers between the emitter and collector regions.

According to another embodiment of the present invention, a method forfabricating a lateral bipolar transistor includes providing asemiconductor substrate of a first conductivity type; forming a firstburied layer of the first conductivity type and a second buried layer ofa second conductivity type in the substrate where the secondconductivity type is opposite the first conductivity type; forming oneor more epitaxial layer of the second conductivity type successively onthe substrate; forming two or more diffusion regions in each epitaxiallayer where the diffusion regions formed in one epitaxial layer are invertical alignment with the diffusion regions formed in an adjacentepitaxial layer; and annealing the semiconductor substrate and the oneor more epitaxial layer. A first set of diffusion regions in verticalalignment forms a contiguous diffusion region of the first conductivitytype and functions as an emitter region, and a second set of diffusionregions in vertical alignment forms a contiguous diffusion region of thefirst conductivity type and functions as a collector region. A baseregion is formed in the one or more epitaxial layers between the emitterand collector regions.

According to yet another embodiment of the present invention, a lateraltrench PNP bipolar transistor is formed using trench emitter and trenchcollector regions. The lateral trench PNP transistor can be gated forbreakdown voltage control. In another embodiment, a lateral PNP bipolartransistor with a merged LDMOS transistor is formed to achieve highperformance.

The present invention is better understood upon consideration of thedetailed description below and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1K are cross-sectional views illustrating the process step forfabricating a lateral PNP bipolar transistor according to embodiments ofthe present invention.

FIG. 2 is a cross-sectional view of a lateral PNP bipolar transistoraccording to a first alternate embodiment of the present invention.

FIG. 3 is a cross-sectional view of a lateral PNP bipolar transistoraccording to a second alternate embodiment of the present invention.

FIGS. 4A to 4H are cross-sectional views illustrating the process stepfor fabricating a lateral PNP bipolar transistor according to a thirdembodiment of the present invention.

FIGS. 5A-5J are cross-sectional views illustrating the process step forfabricating a lateral PNP bipolar transistor according to alternateembodiments of the present invention.

FIG. 6 is a cross-sectional view of a lateral PNP bipolar transistoraccording to a fourth alternate embodiment of the present invention.

FIG. 7 is a cross-sectional view of a lateral PNP bipolar transistoraccording to a fifth alternate embodiment of the present invention.

FIGS. 8A to 8J are cross-sectional views illustrating the process stepfor fabricating a lateral PNP bipolar transistor according to alternateembodiments of the present invention.

FIGS. 9A to 9D are cross-sectional views illustrating the process stepfor fabricating a lateral PNP bipolar transistor according to alternateembodiments of the present invention.

FIG. 10 is a cross-sectional view of a lateral trench bipolar transistoraccording to one embodiment of the present invention.

FIG. 11 is a cross-sectional view of a merged lateral PNP bipolartransistor with a LDMOS transistor according to one embodiment of thepresent invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In accordance with the principles of the present invention, a lateralbipolar transistor includes trench emitter and trench collector regionsto form ultra-narrow emitter regions, thereby improving emitterefficiency. A salient feature of the lateral bipolar transistor of thepresent invention is that the same trench process is used to form theemitter/collector trenches as well as the trench isolation structures sothat no additional processing steps are needed to form the trenchemitter and collector. In embodiments of the present invention, thelateral bipolar transistor is a PNP bipolar transistor. In embodimentsof the present invention, the trench emitter and trench collectorregions may be formed using ion implantation into trenches formed in asemiconductor layer. In other embodiments, the trench emitter and trenchcollector regions may be formed by out-diffusion of dopants from heavilydoped polysilicon filled trenches.

According to another aspect of the present invention, a lateral bipolartransistor with deep emitter and deep collector regions is formed usingmultiple epitaxial layers of the same conductivity type. Deep emitterand deep collector regions are formed without the use of trenches. Inone embodiment, a lateral PNP bipolar transistor is formed with two ormore N-type Epitaxial layer. Heavily doped P+ regions are formed in eachepitaxial layer and are vertically aligned with each other so that theheavily doped regions diffuse and merge into a single vertical diffusionregion after anneal, forming deep emitter and deep collector regions.

In other embodiments of the present invention, a lateral trench PNPbipolar transistor is formed using trench emitter and trench collectorregions. The lateral trench PNP transistor can be gated for breakdownvoltage control. In another embodiment, a lateral PNP bipolar transistorwith a merged LDMOS transistor is formed to achieve high performance.

The lateral bipolar transistors of the present invention realize highperformance with improved emitter and collector efficiency. The lateralbipolar transistors also realize minimized substrate injection andparasitic substrate PNP effect. Importantly, the lateral bipolartransistors of the present invention realize high current gain at highcurrent densities. Moreover, the lateral bipolar transistors of thepresent invention are constructed using structures that are compatiblewith standard CMOS or BCD (Bipolar-CMOS-DMOS) technologies. Therefore,the lateral bipolar transistors of the present invention can be readilyintegrated into existing fabrication processes.

(1) Lateral PNP using Isolation Structures for Trench Emitter andCollector and P+ Implantation into Trenches

In a first embodiment of the present invention, the trench emitter andtrench collector are formed by ion implantation into the sidewall oftrenches formed in a semiconductor layer. A bottom portion of the trenchis lined with a thin sidewall oxide layer with the remaining portionfilled with polysilicon. The thin sidewall oxide layer at the bottomportion of the trenches has the effect of preventing emitter-to-basebreakdown at the bottom corners of the trenches.

The fabrication process and the structure of the lateral PNP transistorof the present invention will now be described with reference to FIGS.1A to 1K. Referring to FIGS. 1A to 1K, the lateral PNP transistor isformed on a P-type silicon substrate 10. A buffer oxide layer 12 may beformed on the top surface of the substrate 10 before the ionimplantation steps that follow to form P+ buried layer 14 and N+ buriedlayer 16. The P+ buried layer 14 and the N+ buried layer 16 are formedusing separate masking and ion implantation steps. One or more annealscan be performed to drive in the implanted dopants, thereby forming theburied layers as shown in FIG. 1A.

The buffer oxide layer 12 is then removed and an N-type Epitaxial layer18 is formed on the substrate 10, as shown in FIG. 1B. In someembodiments, a buffer oxide is formed and then a masking and high dosephosphorus ion implantation step is performed to form N+ sinkers 20which are heavily doped N-type regions for contacting the N+ buriedlayer. N+ sinkers 20 are optional and may be omitted in some embodimentsof the present invention. In an alternate embodiment, N-type Epitaxiallayer 18 is doped to a dopant level typically used for N-wells.

After the N-Epitaxial layer 18 is formed, a thick oxide hard mask 22 isformed on the epitaxial layer and serves as a dielectric layer forelectrical insulation. The oxide hard mask 22 is first patterned todefine areas where trenches in the epitaxial layer are to be formed. Theoxide hard mask 22 is etched down to the substrate surface. Next, atrench etch follows where the exposed substrate is etched to form narrowtrenches 24 for forming trench emitters and collectors and widertrenches 26 for forming trench isolation structures, as shown in FIG.1C. In this manner, a single trench etch step is used to form bothemitter/collector trenches and isolation trenches. The trench openings26 for trench isolation structures are wider and therefore the trenchesare etched deeper into the epitaxial layer than the trenches 24. In someembodiments, an optional round hole etch is performed to smooth out thebottom of the trenches.

Next, a P-type ion implantation step is carried out to implant P-typedopants on the side walls of the trenches 24 and 26, forming P-typeregions 28, as shown in FIG. 1D. In one embodiment, the implantationstep performed is a multiple tilt angle implantation with rotation usingboron. The P-type ion implantation is performed in such a way that theP-type implant reaches the sidewall and bottom of the trenches 26 forisolation. However, the thickness of the oxide hard mask, the width ofthe narrow trenches 24 and the tilt angle of the implantation areselected so that bottom portions of the trenches 24 are shielded fromany P-type implant. In some embodiments, an optional N-type trenchbottom compensation implant is performed to form N+ regions 30 undernarrow trenches 24, as shown in FIG. 1D. The compensation implant isoptional and may be included when the tilt of the P-type implant is notsufficient to avoid introducing P-type dopants to the bottom of narrowtrenches 24.

Then, a thin layer of oxide 32 is deposited or thermally grown in thetrench openings 24, 26, as shown in FIG. 1E. The oxide layer 32, alsoreferred to as a trench lining oxide, lines both the trench bottomportions and the trench sidewalls. Preferably, the oxide layer 32 hasgood step coverage to cover conformally the sidewalls and bottomportions of the trenches. In one embodiment, the oxide layer 32 is alayer of high temperature thermal oxide (HTO). Then, a polysilicon layer34 is deposited, filling the trenches 24, 26 and forming a polysiliconlayer above the surface of the trench lining oxide 32 and the oxide hardmask 22, as shown in FIG. 1E. In some embodiments, a P+ doping step iscarried out to dope the deposited polysilicon layer.

The polysilicon layer 34 is first etched back to the top of the trenchlining oxide 32 on top of the oxide hard mask 22, as shown in FIG. 1F.Then, the polysilicon layer 34 is further over-etched to recess thepolysilicon layer below the surface of the silicon surface, that is,below the top surface of the N-Epitaxial layer 18, as shown in FIG. 1G.Subsequently, an isotropic oxide etch is performed to remove the exposedtrench lining oxide 32, as shown in FIG. 1H. The trenches 24, 26 arethus filled partially with polysilicon 34 which is insulated from theN-Epitaxial layer by the trench lining oxide 32 which serves as adielectric layer. The height of the polysilicon 34 and the trench liningoxide 32 in the trenches can vary as long as the polysilicon 34 and thetrench lining oxide 32 fill only a portion of the trenches. The exactheight of the polysilicon/trench lining oxide layer is not critical tothe practice of the present invention as long as sufficient amount ofexposed silicon is left on the sidewalls of the narrow trenches 24 toallow for the formation of electrical contacts to the P+ regions 28.More specifically, the remaining portions of trench lining oxide 32 inthe bottom portions of the trenches 24 provide electrical insulation atthe trench bottom to block off conduction at the trench bottom regions.

Another polysilicon layer 36 is deposited, filling the remainingportions of trenches 24, 26 and forming a polysilicon layer above thesurface of the oxide hard mask 22, as shown in FIG. 1I. The polysiliconlayer 36 is doped with P-type dopants to form a heavily doped P+polysilicon layer. Then, the polysilicon layer 36 is patterned to form acollector interconnect ring 38 and an emitter field plate 40, as shownin FIG. 1J. At this time, the implanted dopants of P+ regions 28 aroundthe sidewall of the trenches 24 are diffused to form P+ diffusion region28 a and P+ diffusion region 28 b. Implanted dopants of P+ regions atthe sidewall of the isolation trenches 26 and P+ buried layer 14 arealso diffused and vertically overlap each other, thus forming theisolation structure 45 as shown in FIG. 1J. The polysilicon layer 36 isfurther patterned to form an isolation structure field plate 42. Then,the lateral PNP bipolar transistor can be completed by forming metalinterconnects over a dielectric layer, as shown in FIG. 1K.

FIG. 1K illustrates one embodiment of a completed lateral PNP bipolartransistor formed using the fabrication process described aboveincluding the optional N+ sinkers 20. Metal contacts to the emitter,collector and base terminals of the PNP transistor are formed overcontact openings in a dielectric layer 44, such as a BPSG layer. Morespecifically, a collector contact 46 is formed making electrical contactto the collector interconnector ring 38, an emitter contact 48 is formedmaking electrical contact to the emitter field plate 40, and a basecontact 50 is formed making electrical contact to the N+ sinker 20. Inthis manner, a lateral PNP bipolar transistor is formed with the Emitterformed in P+ diffusion region 28 a, the Collector formed in P+ diffusionregion 28 b, and the Base formed in the N-Epitaxial layer 18. In thepresent embodiment, the Collector is formed as a ring structuresurrounding the Emitter. The Base is the distance between the P+diffusion region 28 a and P+ diffusion region 28 b.

N+ sinkers 20 electrically contacting the N+ buried layer has the effectof reducing the base resistance and there by disabling the verticalparasitic PNP transistor that is formed by the P+ Emitter, theN-Epitaxial Base and the P-substrate 10. The lateral PNP transistor thusformed is more robust and is immune to undesired parasitic substrateconduction. Furthermore, the emitter field plate 40 overlying the baseregion acts as an electrostatic shield for the base region and has theeffect of increasing the current gain of the transistor. Morespecifically, the emitter field plate has the function of shielding thebase region from electrostatic build-up in the overlying oxide layer,where such electrostatic build-up is known to result in excessiveleakage, degradation in breakdown voltage and reduction in current gain.The lateral PNP bipolar transistor as thus constructed is robust whilerealizing high performance.

FIG. 2 illustrates an alternate embodiment of a lateral PNP bipolartransistor formed in the same manner as the lateral PNP transistor inFIG. 1K but with the addition of laterally diffused base regionssurrounding the emitter and collector diffusion regions. Referring toFIG. 2, a lateral PNP transistor 60 is formed using substantially thesame fabrication process described above with reference to FIGS. 1A to1K. However, lateral PNP transistor 60 is formed using an N-Epitaxiallayer 68 having a lower doping level than the standard base dopinglevel. That is, the doping level for N-Epitaxial layer 68 is lower thanthe doping level used in N-Epitaxial layer 18 in the above-embodiment.Then, before the P+ regions 28 are implanted, an additional N-Baseimplantation step is carried out to form N-Base regions 62 around allthe trenches. The N-Base implants do not need to be blocked from thebottom of the narrow trenches, as in the case of the P+ implants. Afterthe drive-in step, N-Base regions 62 are formed around all the trenches.N-Base regions 62 have a doping level higher than the doping level ofthe N-Epitaxial layer 68. Although the N-Base implants are alsointroduced to the wide trenches where the isolation structures are to beformed, the subsequent P+ implants and drive-in and also the heavilydoped P+ buried layer will overcome the N-Base implants. Therefore,introducing the N-Base implants to the isolation trenches does not causean impact and no masking step is necessary for the N-Base implantation.After the N-Base implantation and drive-in, the P+ implantation step andsubsequent processing steps can be carried out as described above withreference to FIGS. 1A to 1K. As thus constructed, lateral PNP transistor60 includes a laterally diffused narrow base to achieve even higherperformance.

In lateral PNP transistor 60, the Base includes part of the N-Epitaxiallayer 68, denoted by a distance “d”, between two adjacent N-Base regions62. In this case, a given pitch size between the narrow trenches areused so as to leave the N-Epitaxial layer between the N-Base regions. Inan alternate embodiment shown in FIG. 3, a smaller pitch between thenarrow trenches can be used so that the N-Base regions 62 abut eachother, with no N-Epitaxial layer left in the Base of the lateral PNPtransistor. The lateral PNP transistor 70 thus constructed achieves highperformance with a laterally diffused narrow base.

Alternate Embodiment—Nitride Mask

In the above-described embodiment, an oxide hardmask is formed over theepitaxial layer and masked for trench formation. The oxide hardmask isleft on the epitaxial layer for the remainder of the fabrication processand functions as an insulating layer for the epitaxial layer. Accordingto an alternate embodiment of the present invention, a nitride mask isused and the oxide hardmask is removed prior to the lining oxideformation. FIGS. 4A to 4H are cross-sectional views illustrating theprocess step for fabricating a lateral PNP bipolar transistor accordingto alternate embodiments of the present invention.

Referring to FIGS. 4A to 4H, the lateral PNP transistor is formed on aP-type silicon substrate 10 with an N-type Epitaxial layer 18 formedthereon. P+ buried layer 14 and the N+ buried layer 16 are formed on thesubstrate using separate masking and ion implantation steps. One or moreanneals can be performed to drive in the implanted dopants, therebyforming the buried layers between the substrate and the epitaxial layeras shown in FIG. 4A. In some embodiments, a buffer oxide or pad oxide isformed and optional N+ sinker implantation steps may be carried out toform N+ sinkers to the N+ buried layer.

After the N-Epitaxial layer 18 is formed, a nitride layer 82 isdeposited on the buffer oxide of the epitaxial layer. Then, a thickoxide hardmask 22 is formed on the nitride layer. The oxide hardmask 22and the nitride layer 82 are first patterned to define areas wheretrenches in the epitaxial layer are to be formed. The oxide hardmask 22,the nitride layer 82 and the pad oxide are etched down to the siliconsurface of the epitaxial layer. Next, a trench etch follows where theexposed silicon is etched to form narrow trenches 24 for forming trenchemitters and collectors and wider trenches 26 for forming trenchisolation structures, as shown in FIG. 4B.

Next, a P-type ion implantation step is carried out to implant P-typedopants on the side walls of the trenches 24 and 26, forming P-typeregions 28, as shown in FIG. 4C. In one embodiment, the implantationstep performed is a multiple tilt implantation with rotation usingboron. The P-type ion implantation is performed in such a way that theP-type implant reaches the sidewalls of trenches 24 and the sidewallsand bottoms of the trenches 26. In some embodiments, an optional N-typetrench bottom compensation implant is performed to form N+ regions 30under narrow trenches 24.

Then, the oxide hardmask 22 is removed, leaving the nitride layer 82. Athin layer of oxide 32 is deposited or thermally grown in the trenchopenings 24, 26, as shown in FIG. 4C. The oxide layer 32, also referredto as a trench lining oxide, lines both the trench bottom portions andthe trench sidewalls. In one embodiment, the oxide layer 32 is a layerof high temperature thermal oxide (HTO). Then, a polysilicon layer 34 isdeposited, filling the trenches 24, 26 and forming a polysilicon layerabove the surface of the trench lining oxide 32 and the nitride layer82, as shown in FIG. 4C. In some embodiments, a P+ doping step iscarried out to dope the deposited polysilicon layer.

The polysilicon layer 34 is first etched back to the top of the trenchlining oxide 32 on top of the nitride layer 82, as shown in FIG. 4D.Then, the polysilicon layer 34 is further over-etched to recess thepolysilicon layer below the surface of the silicon surface, that is,below the top surface of the N-Epitaxial layer 18, as shown in FIG. 4E.Subsequently, an isotropic oxide etch is performed to remove the exposedtrench lining oxide 32, as shown in FIG. 4F. The nitride layer 82 isexposed and the trenches 24, 26 are filled partially with polysilicon 34which is insulated from the N-Epitaxial layer by the trench lining oxide32.

Another polysilicon layer 36 is deposited, filling the remainingportions of trenches 24, 26 and forming a polysilicon layer above thesurface of the nitride layer 82, as shown in FIG. 4G. The polysiliconlayer 36 is doped with P-type dopants to form a heavily doped P+polysilicon layer. Then, the polysilicon layer 36 is patterned to form acollector interconnect ring 38 and an emitter field plate 40, as shownin FIG. 4H. The polysilicon layer 36 is further patterned to form anisolation structure field plate 42. Then, the lateral PNP bipolartransistor can be completed by forming metal interconnects over adielectric layer, in the same manner as shown above with reference toFIG. 1K. In the fabrication process of FIGS. 4A to 4H, the oxidehardmask is removed after trench formation and P+ ion implantation,leaving only the nitride layer to cap the epitaxial layer. The lateralPNP transistor thus formed is capable of high performance.

(2) Lateral PNP using Isolation Structures for Trench Emitter andCollector and P+ Auto-Doping in Trenches

In a second embodiment of the present invention, the trench emitter andtrench collector are formed by filling trenches formed in asemiconductor layer with heavily doped polysilicon layer and auto-dopingthe trench sidewalls by out-diffusion of dopants from the dopedpolysilicon filler. An oxide layer is formed on the bottom portion ofthe trenches prior to polysilicon deposition. The oxide layer providesinsulation and prevents emitter to base breakdown at the bottom cornersof the trenches.

The fabrication process and the structure of the lateral PNP transistorof the present invention will now be described with reference to FIGS.5A to 5J. Referring to FIGS. 5A to 5J, the lateral PNP transistor isformed on a P-type silicon substrate 10. A buffer oxide layer 12 may beformed on the top surface of the substrate 10 before the ionimplantation steps that follow to form P+ buried layer 14 and N+ buriedlayer 16. The P+ buried layer 14 and the N+ buried layer 16 are formedusing separate masking and ion implantation steps. One or more annealscan be performed to drive in the implanted dopants, thereby forming theburied layers as shown in FIG. 5A.

The buffer oxide layer 12 is then removed and an N-type Epitaxial layer18 is formed on the substrate 10, as shown in FIG. 5B. In someembodiments, a buffer oxide is formed and then a masking and high dosephosphorus ion implantation step is performed to form N+ sinkers 20which are heavily doped N-type regions for contacting the N+ buriedlayer. N+ sinkers 20 are optional and may be omitted in some embodimentsof the present invention. In an alternate embodiment, N-type Epitaxiallayer 18 is doped to a dopant level typically used for N-wells.

After the N-Epitaxial layer 18 is formed, a thick oxide hard mask 22 isformed on the epitaxial layer. The oxide hard mask 22 is first patternedto define areas where trenches in the epitaxial layer are to be formed.The oxide hard mask 22 is etched down to the substrate surface. Next, atrench etch follows where the exposed substrate is etched to form narrowtrenches 24 for forming trench emitters and collectors and widertrenches 26 for forming trench isolation structures, as shown in FIG.5C. In this manner, a single trench etch step is used to form bothemitter/collector trenches and isolation trenches. The trench openings26 for trench isolation structures are wider and therefore the trenchesare etched deeper into the epitaxial layer than the trenches 24. In someembodiments, an optional round hole etch is performed to smooth out thebottom of the trenches.

Next, the oxide hardmask 22 is removed and a second oxide layer 84 isdeposited on the silicon surfaces. That is, the top of the epitaxiallayer and the sidewalls and bottom portions of the trenches are allcovered with the second oxide layer 84, as shown in FIG. 5D. In oneembodiment, the second oxide layer 84 is a high density plasma (HDP)oxide. HDP oxide is deposited in such a way that a thick oxide layerresults in the bottom portions of the trenches and on top of theepitaxial layer while a thin oxide layer results along the sidewalls ofthe trenches. A densification step may then follow to densify the HDPoxide.

Then, a short wet oxide etch is performed to remove the thin oxide layeron the sidewalls of the trenches, as shown in FIG. 5E. As a result ofthe oxide etch, the oxide layer 84 remains on the top of the epitaxiallayer and also at bottom portions of the trenches but is removed fromthe sidewall of the trenches. Then, an optional masking and etch stepmay be performed to remove the oxide layer 84 from the bottom of thetrenches 26 for isolation structures, as shown in FIG. 5F.

A polysilicon layer 86 is deposited, filling the trenches 24, 26 andforming a polysilicon layer above the surface of the oxide layer 84, asshown in FIG. 5G. In the present embodiment, the polysilicon layer 86 isa P+ heavily doped polysilicon layer. Then, the polysilicon layer 86 ispatterned to form a collector interconnect ring 38 and an emitter fieldplate 40, as shown in FIG. 5H. The polysilicon layer 86 is furtherpatterned to form an isolation structure field plate 42. Then, theentire device is annealed, causing the P+ dopants from the P+ heavilydoped polysilicon layer 86 to out-diffuse into the sidewalls of thetrenches 24 and the sidewalls and the bottoms of trenches 26, as shownin FIG. 5I. At the narrow trenches 24, the P+ regions 28 are formed onlyalong the sidewall of the trenches because the oxide layer 84 remainingin the bottom portions of the trenches prevents out-diffusion of dopantsat the narrow trench bottoms. However, at the wide trenches 26 where thebottom oxide is removed, the P+ dopants from the polysilicon layer 86out-diffuse around the sidewalls and the bottoms of the trenches. The P+diffusion region 28 of the isolation trenches 26 extends into theepitaxial layer to merge with the P+ buried layer 14 forming theisolation structure, as shown in FIG. 5I.

FIG. 5J illustrates one embodiment of a completed lateral PNP bipolartransistor formed using the fabrication process described aboveincluding the optional N+ sinkers 20. Metal contacts to the emitter,collector and base terminals of the PNP transistor are formed overcontact openings in a dielectric layer 44, such as a BPSG layer. Morespecifically, a collector contact 46 is formed making electrical contactto the collector interconnector ring 38, an emitter contact 48 is formedmaking electrical contact to the emitter field plate 40, and a basecontact 50 is formed making electrical contact to the N+ sinker 20. Inthis manner, a lateral PNP bipolar transistor is formed with the Emitterformed in P+ diffusion region 28 a, the Collector formed in P+ diffusionregion 28 b, and the Base formed in the N-Epitaxial layer 18. In thepresent embodiment, the Collector is formed as a ring structuresurrounding the Emitter. The Base is the distance between the P+diffusion region 28 a and P+ diffusion region 28 b. As described above,N+ sinkers 20 electrically contacting the N+ buried layer has the effectof reducing the base resistance and there by disabling the verticalparasitic PNP transistor in the device. The lateral PNP transistor thusformed is more robust and is immune to undesired parasitic substrateconduction. Furthermore, the emitter field plate 40 overlying the baseregion acts as an electrostatic shield for the base region and has theeffect of increasing the current gain of the transistor. The lateral PNPbipolar transistor as thus constructed is robust while realizing highperformance.

FIG. 6 illustrates an alternate embodiment of a lateral PNP bipolartransistor formed in the same manner as the lateral PNP transistor inFIG. 5J but with the addition of laterally diffused base regionssurrounding the emitter and collector diffusion regions. Referring toFIG. 6, a lateral PNP transistor 90 is formed using substantially thesame fabrication process described above with reference to FIGS. 5A to5J. However, lateral PNP transistor 90 is formed using an N-Epitaxiallayer 68 having a lower doping level than the standard base dopinglevel. That is, the doping level for N-Epitaxial layer 68 is lower thanthe doping level used in N-Epitaxial layer 18 in the above-embodiment.Then, after the trenches are formed and the oxide layer 84 have beendeposited and etched, as shown in FIG. 5F, an additional N-Baseimplantation step is carried out to form N-Base regions 62 around allthe trenches. The N-Base implants do not need to be blocked from thebottom of the narrow trenches. After the drive-in step, N-Base regions62 are formed around all the trenches. N-Base regions 62 have a dopinglevel higher than the doping level of the N-Epitaxial layer 68. Althoughthe N-Base implants are also introduced to the wide trenches where theisolation structures are to be formed, the subsequent P+ auto-doping anddrive-in and also the heavily doped P+ buried layer will overcome theN-Base implants. Therefore, no masking step is necessary for the N-Baseimplantation for the isolation trenches. After the N-Base implantationand drive-in, the subsequent processing steps, such as polysilicondeposition, can be carried out as described above with reference toFIGS. 5G to 5J. As thus constructed, lateral PNP transistor 90 includesa laterally diffused narrow base to achieve even higher performance.

In lateral PNP transistor 90, the Base includes part of the N-Epitaxiallayer 68, denoted by a distance “d”, between two adjacent N-Base regions62. In this case, a given pitch size between the narrow trenches areused so as to leave the N-Epitaxial layer between the N-Base regions. Inan alternate embodiment shown in FIG. 7, a smaller pitch between thenarrow trenches can be used so that the N-Base regions 62 abut eachother, with no N-Epitaxial layer left in the Base of the lateral PNPtransistor. The lateral PNP transistor 100 thus constructed achieveshigh performance with a laterally diffused narrow base.

Alternate Embodiment—Nitride Mask

In the above-described embodiment, the HDP oxide layer 84 is formed overthe epitaxial layer and masked for trench formation. The oxide layer 84is left on the epitaxial layer for the remainder of the fabricationprocess and functions as an insulating layer for the epitaxial layer.According to an alternate embodiment of the present invention, a nitridemask is used in addition to the HDP oxide layer. Using the nitride maskhas the benefits of protecting the top edges of the trenches and tominimize P-type dopant auto-diffusion from the overlying polysiliconlayer. FIGS. 8A to 8J are cross-sectional views illustrating the processstep for fabricating a lateral PNP bipolar transistor according toalternate embodiments of the present invention.

Referring to FIGS. 8A to 8J, the lateral PNP transistor is formed on aP-type silicon substrate 10. A buffer oxide layer 12 may be formed onthe top surface of the substrate 10 before the ion implantation stepsthat follow to form P+ buried layer 14 and N+ buried layer 16. The P+buried layer 14 and the N+ buried layer 16 are formed using separatemasking and ion implantation steps. One or more anneals can be performedto drive in the implanted dopants, thereby forming the buried layers asshown in FIG. 8A.

The buffer oxide layer 12 is then removed and an N-type Epitaxial layer18 is formed on the substrate 10, as shown in FIG. 8B. In an alternateembodiment, N-type Epitaxial layer 18 is doped to a dopant leveltypically used for N-wells. A buffer oxide may be formed on theN-Epitaxial layer 18. In some embodiments, N+ sinker implantation stepsto form N+ sinkers contacting the N+ buried layer may be performed asdescribed above.

After the N-Epitaxial layer 18 is formed, a nitride layer 102 isdeposited on the buffer oxide of the epitaxial layer. Then, a thickoxide hard mask 22 is formed on the nitride layer. The oxide hard mask22 and the nitride layer 102 are first patterned to define areas wheretrenches in the epitaxial layer are to be formed. The oxide hard mask22, the nitride layer 82 and the pad oxide are etched down to thesilicon surface of the epitaxial layer. Next, a trench etch followswhere the exposed silicon is etched to form narrow trenches 24 forforming trench emitters and collectors and wider trenches 26 for formingtrench isolation structures, as shown in FIG. 8C.

Next, the oxide hardmask 22 is removed and a second oxide layer 84 isdeposited on the silicon surfaces, including the top of the nitridelayer and the sidewalls and bottom portions of the trenches, as shown inFIG. 8D. In one embodiment, the second oxide layer 84 is a high densityplasma (HDP) oxide. HDP oxide is deposited in such a way that a thickoxide layer results in the bottom portions of the trenches and on top ofthe epitaxial layer while a thin oxide layer results along the sidewallsof the trenches. A densification step may then follow to densify the HDPoxide.

Then, a short wet oxide etch is performed to remove the thin oxide layeron the sidewalls of the trenches, as shown in FIG. 8E. As a result ofthe oxide etch, the oxide layer 84 remains on the top of the nitridelayer and also at bottom portions of the trenches but is removed fromthe sidewalls of the trenches. Then, an optional masking and etch stepmay be performed to remove the oxide layer 84 from the bottom of thetrenches 26 for isolation structures, as shown in FIG. 8F. The nitridelayer 102, which is not affected by the oxide etch, remains intact onthe top of the epitaxial layer. In this manner, the nitride layer 102protects the top edges of the trenches from subsequent auto-doping fromthe polysilicon layer, thereby minimizing excessive dopant penetrationat the top corners of the trenches. More specifically, when theepitaxial layer is covered only by the HDP oxide, the oxide etch willcause the oxide layer on the top of the epitaxial layer to recess fromthe top corners of the trenches, as shown in FIG. 5E. Then, when theheavily doped polysilicon layer is formed above the oxide layer andauto-doping is carried out, the P+ diffusion region may extend furtherinto the epitaxial layer at the top corners of the trenches as opposedto the sidewalls of the trenches, as shown in FIG. 5I. The use of anitride layer over the epitaxial layer prevents this excessive dopantpenetration at the top corners of the trenches, as will be described inmore detail below.

After the HDP oxide layer 84 is etched, a polysilicon layer 86 isdeposited, filling the trenches 24, 26 and forming a polysilicon layerabove the surface of the oxide layer 84, as shown in FIG. 8G. In thepresent embodiment, the polysilicon layer 86 is a P+ heavily dopedpolysilicon layer. Then, the polysilicon layer 86 is patterned to form acollector interconnect ring 38 and an emitter field plate 40, as shownin FIG. 8H. The polysilicon layer 86 is further patterned to form anisolation structure field plate 42. Then, the entire device is annealed,causing the P+ dopants from the P+ heavily doped polysilicon layer 86 toout-diffuse into the sidewalls of the trenches 24 and the sidewalls andthe bottoms of trenches 26, as shown in FIG. 8I. At the narrow trenches24, the P+ regions 28 are formed only along the sidewall of the trenchesbecause the oxide layer 84 remaining in the bottom portions of thetrenches prevents out-diffusion of dopants at the narrow trench bottoms.However, at the wide trenches 26 where the bottom oxide is removed, theP+ dopants from the polysilicon layer 86 out-diffuse around thesidewalls and the bottoms of the trenches. The P+ diffusion region 28 ofthe isolation trenches 26 extends into the epitaxial layer to merge withthe P+ buried layer 14 forming the isolation structure, as shown in FIG.8I.

After the annealing processing to form P+ diffusion regions 28, theremaining processing steps for completing the lateral PNP transistor areperformed. For instance, a dielectric layer 44, such as a BPSG layer, isdeposited on the polysilicon layer and is patterned to form collector,emitter and substrate contact openings. Then metal deposition andpatterning may be performed to forms contacts to the emitter, collectorand base of the PNP transistors. The lateral PNP transistor thus formedis more robust and is immune to undesired parasitic substrateconduction. Furthermore, the emitter field plate 40 overlying the baseregion acts as an electrostatic shield for the base region and has theeffect of increasing the current gain of the transistor. The lateral PNPbipolar transistor as thus constructed is robust while realizing highperformance.

(3) Lateral PNP in Multi-Layer Epitaxial Layers

According to another aspect of the present invention, a lateral bipolartransistor with deep emitter and deep collector regions is formed usingmultiple epitaxial layers of the same conductivity type. FIGS. 9A to 9Dare cross-sectional views illustrating the process step for fabricatinga lateral PNP bipolar transistor according to alternate embodiments ofthe present invention. Referring to FIGS. 9A to 9D, the lateral PNPtransistor is formed on a P-type silicon substrate 200. A buffer oxidelayer 202 may be formed on the top surface of the substrate 200 beforethe ion implantation steps that follow to form P+ buried layer 204 andN+ buried layer 206. The P+ buried layer 204 is also referred to as an“ISO Up” (isolation up) region as referring to a buried layer for anisolation structure that diffuses to merge with an overlying diffusionregion. The P+ ISO UP layer 204 and the N+ buried layer 206 are formedusing separate masking and ion implantation steps. One or more annealscan be performed to drive in the implanted dopants, thereby forming theP+ ISO Up and N+ buried layers as shown in FIG. 9A.

The buffer oxide layer 202 is then removed and a first N-type Epitaxiallayer 210 is formed on the substrate 200, as shown in FIG. 9B. A padoxide layer 212 is grown on the first epitaxial layer 210. Then, amasking step is performed to define areas for P+ buried layers 214. Anion implantation step using P-type dopants, such as Boron, then followsto form P+ buried layers 214, as shown in FIG. 9B. One or more of the P+buried layers 214 are aligned vertically with the P+ ISO UP layer 204.An optional anneal may be performed. In some embodiments, a masking andhigh dose phosphorus ion implantation step is performed to form N+sinkers (not shown) which are heavily doped N-type regions forcontacting the N+ buried layer 206, as described above. N+ sinkers areoptional and may be omitted in some embodiments of the presentinvention.

Then, the pad oxide layer 212 is removed and a second N-type Epitaxiallayer 220 is formed on the first epitaxial layer 210, as shown in FIG.9C. A pad oxide layer 222 is grown on the second epitaxial layer 220.Then, another masking step is performed to define areas for P+ sinkerregions 224. An ion implantation step using P-type dopants, such asBoron, then follows. The P+ sinker implantation step is carried out athigh does for a deep implantation, as shown in FIG. 9C. The P+ sinkerregions 224 are aligned vertically with the P+ buried layers 214. Insome embodiments, a masking and high dose phosphorus ion implantationstep can be performed to form N+ sinkers (not shown) for contacting theN+ sinkers formed in the first epitaxial layer. N+ sinkers are optionaland may be omitted in some embodiments of the present invention.

Then, the semiconductor device including the first and second epitaxiallayers 210, 220 are annealed and the implanted dopants from P+ ISO UPlayer 204, the P+ buried layers 214 and the P+ sinker regions 224diffuse so that the vertically aligned implanted regions merge into eachother, as shown in FIG. 9D. More specifically, P+ sinker region 224 a ismerged with P+ buried layer 214 a to form a contiguous P+ region whichcan be used to form the emitter 230 of a lateral PNP transistor. P+sinker region 224 b is merged with P+ buried layer 214 b to form acontiguous P+ region which can be used to form the collector 232 of alateral PNP transistor. In the case the collector is formed as a ringaround the emitter, P+ sinker region 224 c and P+ buried layer 214 c canbe connected to or formed as a ring region around P+ sinker region 224 aand P+ buried layer 214 a. Finally, P+ sinker region 224 d is mergedwith P+ buried layer 214 d and further merged with P+ ISO UP region 204d to form a contiguous P+ region which can be used to form an isolationstructure 234 for the lateral PNP transistor.

Subsequent processing steps can then be performed to complete thelateral PNP transistor, including dielectric deposition, contact maskand etch and contact metallization.

As thus constructed, a lateral PNP transistor with deep emitter and deepcollector regions are formed without the use of trenches. In the presentembodiment, the lateral PNP bipolar transistor is formed using twoN-type epitaxial layers. In other embodiments, three or more N-typeepitaxial layers successively formed on the substrate may be used toform deep emitter and collector regions. Each N-type epitaxial layerincludes heavily doped P+ regions which are vertically aligned with P+regions formed in the adjacent epitaxial layers so that all verticallyaligned P+ regions are merged into a single vertical diffusion regionafter the annealing process. In this manner, a lateral PNP transistorwith deep emitter and deep collector regions is formed.

(4) Trench PNP with Gated Junction

FIG. 10 is a cross-sectional view of a lateral trench bipolar transistoraccording to one embodiment of the present invention. Referring to FIG.10, a lateral bipolar transistor 300 is formed on a P-type substrate 302with a N-type buried layer 304 formed thereon. An N-type epitaxial layer306 is formed on the P-type substrate 302. Trenches 308, 310 are formedin the epitaxial layer 306 and filled with P+ doped polysilicon ormetal. When the trenches are filled with P+ doped polysilicon,out-diffusion of P-type dopant during subsequent anneal forms P+diffusion regions 312 and 314 around the trenches. A gate polysilicon316, separated from the N-epitaxial layer 306 by a gate oxide layer, isformed over the N-epitaxial layer between the two trenches. A dielectriclayer is formed over the gate polysilicon and contacts are made to thetrenches.

As thus constructed, the trenches 308, 310 form the emitter andcollector terminals of the lateral PNP transistor. More specifically,the emitter is formed in trench 308 while the collector is formed intrench 310. The base is formed in the N-Epitaxial layer 306 and contactto the base can be made through an N+ sinker to the N+ buried layer 304.

In one embodiment, the gate polysilicon 316 is electrically shorted tothe emitter so that the gate polysilicon functions as a field plate forthe base region. In another embodiment, the gate polysilicon 316 is usedas a gate control to provide breakdown voltage tuning More specifically,the gate control can be used to vary the emitter-to-gate breakdownvoltage.

(5) Merged Lateral PNP and LDMOS

FIG. 11 is a cross-sectional view of a merged lateral PNP bipolartransistor with a LDMOS transistor according to one embodiment of thepresent invention. Referring to FIG. 11, a lateral bipolar transistor400 is formed on a P-type substrate 402 with a N-type buried layer 404formed thereon. An N-type epitaxial layer 406 is formed on the P-typesubstrate 402. A high-voltage P-well 420 is formed in the N-Epitaxiallayer 406 to form the drift region of the LDMOS transistor. Thehigh-voltage P-well 420 has a dopant concentration lower than a standardP-well to allow the P-well to withstand high voltages. A field oxidelayer 418 is formed on the top surface of the N-Epitaxial layer and inthe P-well 420.

A trench 408 is formed in the epitaxial layer 406 while another trench410 is formed in the high-voltage P-well 420 on the far-side of thefield oxide layer 418. Both trenches are then filled with P+ dopedpolysilicon or metal.

When the trenches are filled with P+ doped polysilicon, out-diffusion ofP-type dopant during subsequent anneal forms P+ diffusion regions 412and 414 around the trenches. A gate polysilicon 416, separated from theN-epitaxial layer 406 by a gate oxide layer, is formed over theN-epitaxial layer from trench 408, over the P-well 420 and over thefield oxide layer 418. A dielectric layer is formed over the gatepolysilicon and contacts are made to the trenches.

As thus constructed, the trenches 408, 410 form the emitter andcollector terminals of the lateral PNP transistor. More specifically,the emitter is formed in trench 408 while the collector is formed intrench 410. The base is formed in the N-Epitaxial layer 406 and contactto the base can be made through an N+ sinker to the N+ buried layer 404.An LDMOS transistor is formed by the gate polysilicon 416 and theemitter terminal functioning as the source and the collector terminalfunctioning as the drain. The LDMOS transistor has the effect ofincreasing the emitter/source to gate breakdown voltage.

The above detailed descriptions are provided to illustrate specificembodiments of the present invention and are not intended to belimiting. Numerous modifications and variations within the scope of thepresent invention are possible. The present invention is defined by theappended claims.

We claim:
 1. A lateral bipolar transistor, comprising: a semiconductorsubstrate of a first conductivity type; a first buried layer of thefirst conductivity type and a second buried layer of a secondconductivity type both formed on the substrate, the second conductivitytype being opposite the first conductivity type; a first epitaxial layerof the second conductivity type formed on the substrate; third, fourth,and fifth buried layers of the first conductivity type formed in thefirst epitaxial layer, the third buried layer being formed in verticalalignment with the first buried layer, the fourth and fifth buriedlayers being positioned above and separated from the second buriedlayer; a second epitaxial layer of the second conductivity type formedon the first epitaxial layer; and first, second and third sinker regionsof the first conductivity type formed in the second epitaxial layer, thefirst sinker region being in vertical alignment with the third buriedlayer, the second sinker region being in vertical alignment with thefourth buried layer, and the third sinker region being in verticalalignment with the fifth buried layer, wherein the first buried layer,the third buried layer and the first sinker region form a contiguousdiffusion region of the first conductivity type and function as anisolation structure, the fourth buried layer and the second sinkerregion form a contiguous diffusion region of the first conductivity typeand function as an emitter region, the fifth buried layer and the thirdsinker region form a contiguous diffusion region of the firstconductivity type and function as a collector region, a base regionbeing formed in the first and second epitaxial layers between theemitter and collector regions.
 2. The lateral bipolar transistor ofclaim 1, further comprising: a fourth sinker diffusion region of thesecond conductivity type formed in the first and second epitaxial layersand extending to and being in electrical contact with the second buriedlayer.
 3. The lateral bipolar transistor of claim 1, wherein the firstconductivity type is P-type conductivity and the second conductivitytype is N-type conductivity.
 4. A method for fabricating a lateralbipolar transistor, comprising: providing a semiconductor substrate of afirst conductivity type; forming a first buried layer of the firstconductivity type and a second buried layer of a second conductivitytype in the substrate, the second conductivity type being opposite thefirst conductivity type; forming one or more epitaxial layers of thesecond conductivity type successively on the substrate; forming two ormore buried layers of the first conductivity type in each of the one ormore epitaxial layers, the buried layer in each epitaxial layer beingpositioned above and separated from the second buried layer and beingformed in vertical alignment with the buried layers formed in anadjacent epitaxial layer; forming a last epitaxial layer of the secondconductivity type on the last one of the one or more epitaxial layers;forming first and second diffusion regions of the first conductivitytype on the last epitaxial layer, each of the first and second diffusionregions being in vertical alignment with a respective one of the buriedlayers formed in the last one of the one or more epitaxial layers; andannealing the semiconductor substrate, the one or more epitaxial layersand the last epitaxial layer, wherein the first diffusion region and afirst set of the buried layers formed in the one or more epitaxiallayers are in vertical alignment to form a contiguous diffusion regionof the first conductivity type and functions as an emitter region, andthe second diffusion region and a second set of the buried layers formedin the one or more epitaxial layers are in vertical alignment to form acontiguous diffusion region of the first conductivity type and functionsas a collector region, a base region being formed in the one or moreepitaxial layers and the last epitaxial layer between the emitter andcollector regions.
 5. The method of claim 4, further comprising: forminga third diffusion region of the first conductivity type in the lastepitaxial layer, wherein the third diffusion region and a third set ofburied layers formed in the one or more epitaxial layers are in verticalalignment with the first buried layer to form a contiguous diffusionregion of the first conductivity type and function as an isolationstructure.
 6. The method of claim 5, wherein forming the first, secondand third diffusion regions of the first conductivity type on the lastepitaxial layer comprises: forming first, second and third sinkerregions of the first conductivity type on the last epitaxial layer asthe first, second and third diffusion regions.
 7. The method of claim 4,further comprising: forming a fourth sinker diffusion region of thesecond conductivity type in the one or more epitaxial layers andextending to and being in electrical contact with the second buriedlayer.
 8. The method of claim 4, wherein the first conductivity type isP-type conductivity and the second conductivity type is N-typeconductivity.
 9. A lateral bipolar transistor, comprising: asemiconductor substrate of a first conductivity type; an epitaxial layerof a second conductivity type formed on the substrate, the secondconductivity type being opposite the first conductivity type; a firstburied layer of the second conductivity type formed between thesubstrate and the epitaxial layer; first and second trenches formed inthe epitaxial layer, the trenches being filled with at least apolysilicon layer being doped with dopants of the first conductivitytype; and first and second diffusion regions of the first conductivitytype formed in the epitaxial layer surrounding sidewalls of respectivefirst and second trenches, the polysilicon layer of each trench being inelectrical contact with the respective diffusion region surroundingsidewalls of the respective trench; and a gate conductor layer formedover a gate dielectric formed over the epitaxial layer, the gateconductor layer being formed between the first and second trenches,wherein an emitter region is formed in the first trench and the firstdiffusion region, a collector region is formed in the second trench andthe second diffusion region, the base region being formed in theepitaxial layer between the first and second diffusion regionsassociated with the first and second trenches.
 10. The lateral bipolartransistor of claim 9, wherein the gate conductor is electricallyconnected to the emitter region and functions as a field plate for thebase region.
 11. The lateral bipolar transistor of claim 9, wherein avoltage is applied to the gate conductor to vary an emitter-to-gatebreakdown voltage.
 12. The lateral bipolar transistor of claim 9,further comprising: a sinker diffusion region of the second conductivitytype formed in the epitaxial layer and extending to and being inelectrical contact with the first buried layer.
 13. A lateral bipolartransistor, comprising: a semiconductor substrate of a firstconductivity type; an epitaxial layer of a second conductivity typeformed on the substrate, the second conductivity type being opposite thefirst conductivity type; a first buried layer of the second conductivitytype formed between the substrate and the epitaxial layer; a well regionof first conductivity type formed in the epitaxial layer; a first trenchformed in the epitaxial layer and a second trench formed in the wellregion of the epitaxial layer, the trenches being filled with at least apolysilicon layer being doped with dopants of the first conductivitytype; and first and second diffusion regions of the first conductivitytype formed in the epitaxial layer surrounding sidewalls of respectivefirst and second trenches, the polysilicon layer of each trench being inelectrical contact with the respective diffusion region surroundingsidewalls of the respective trench; a field oxide layer formed in thewell region and adjacent the second trench; a gate conductor layerformed over a gate dielectric formed over the epitaxial layer andextends over the field oxide layer, the gate conductor layer beingformed between the first and second trenches, wherein an emitter regionis formed in the first trench and the first diffusion region, acollector region is formed in the second trench and the second diffusionregion, the base region being formed in the epitaxial layer between thefirst diffusion region associated with the first trench and the wellregion.
 14. The lateral bipolar transistor of claim 13, wherein avoltage is applied to the gate conductor to vary an emitter-to-gatebreakdown voltage.
 15. The lateral bipolar transistor of claim 13,further comprising: a sinker diffusion region of the second conductivitytype formed in the epitaxial layer and extending to and being inelectrical contact with the first buried layer.